| PART |
Description |
Maker |
| HCF4006B HCF4006BC1 HCF4006BEY HCF4006BM1 HCC_HCF4 |
18-STAGE STATIC SHIFT REGISTER
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):28mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Drain-Source Breakdown Voltage:60V 18 -阶段静态移位寄存器
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
|
| ST26C32 ST26C32CF16 ST26C32CP16 ST26C32IF16 ST26C3 |
QUAD RS-422, RS-423 CMOS Differential Line Receiver LINE RECEIVER, PDSO16
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:13.4A; On-Resistance, Rds(on):0.0065ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC; Leaded Process Compatible:No
|
Exar, Corp.
EXAR[Exar Corporation]
|
| 24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR |
MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护
MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No
MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes
(ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
16/8/4/2/1KbitSerialICBusEEPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| SP8910 SP8910KGMP1T SP8910KG SP8910KGMP1S |
5GHZ ±10 Fixed Modulus Divider
5GHZ 10 Fixed Modulus Divider
5GHZ ÷10 Fixed Modulus Divider(5GHZ ÷10超高速低功耗固定模数除法器)
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:30A; On-Resistance, Rds(on):0.028ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No
|
MITEL[Mitel Networks Corporation]
Mitel Semiconductor
|
| IRF452 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A.
|
General Electric Solid State
|
| ADM3491 ADM3491AR ADM3491AN ADM3491ARU |
3.3 V/ Full Duplex/ 840 uA 20 Mbps/ EIA RS-485 Transceiver
3.3 V, Full Duplex, 840 uA 20 Mbps, EIA RS-485 Transceiver
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:90V; Continuous Drain Current, Id:0.86A; On-Resistance, Rds(on):4ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-205AD; Drain-Source Breakdown Voltage:90V RoHS Compliant: No
3.3V, Full Duplex, 840uA, 20Mbps, EIA RS-485 Transceiver
|
Analog Devices, Inc.
|
| ST7MDT2 ST7MDT2-110 ST7MDT2-220 ST7MDT2-DVP ST7MDT |
A Low-Cost Development Package Including A Full Real-Time Emulation Board(低价格开发软件包)
MDT2-DVP LOW COST ST7 DEVELOPMENT KIT DATASHEET
MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:51A; On-Resistance, Rds(on):0.36ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:6-TSOP; Drain-Source Breakdown Voltage:30V
From old datasheet system
MDT2-DVP LOW COST ST7 DEVELOPMENT KIT DATASHEET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| HCS04MS FN3046 HCS04D HCS04DMSR HCS04HMSR HCS04K H |
From old datasheet system
Radiation Hardened Hex Inverter
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V
|
INTERSIL[Intersil Corporation]
|
| ST662 ST662A ST662AB ST662ABD ST662ABN ST662AC ST6 |
From old datasheet system
DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:14A; On-Resistance, Rds(on):9mohm; Rds(on) Test
|
http://
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No
MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
|
Electronics Industry Public Company Limited
EIC Semiconductor
EIC[EIC discrete Semiconductors]
EIC discrete Semiconduc...
|
| AP1702 AP1702AW AP1702AWL AP1702BW AP1702BWL AP170 |
4.63 V, 3-pin microprocessor reset circuit
4.38 V, 3-pin microprocessor reset circuit
3.08 V, 3-pin microprocessor reset circuit
TRANSISTOR, JFET N TO-18
RECTIFIER SBR SINGLE 2A 30V 75A-ifsm 0.45Vf 0.2mA-ir PowerDI-123 3K/REEL
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:12mA; Zero Gate Voltage Drain Current Max, Idss:30mA; Gate-Source Cutoff Voltage Max, Vgs(off):-4V; Package/Case:TO-78
3-Pin Microprocessor Reset Circuits 3引脚微处理器复位电路
JFET; Transistor Polarity:Dual N Channel; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:12mA; Zero Gate Voltage Drain Current Max, Idss:30mA; Gate-Source Cutoff Voltage Max, Vgs(off):-4V 3引脚微处理器复位电路
2.93 V, 3-pin microprocessor reset circuit
2.63 V, 3-pin microprocessor reset circuit
4.00 V, 3-pin microprocessor reset circuit
|
ANACHIP[Anachip Corp]
ETC[ETC]
复位半导
NEC, Corp.
Kingbright, Corp.
|
| SP8830 SP8830ADG SP8830BDG DES9157201 DES9157201AC |
1.5GHz ÷ 10 Prescaler
1.5GHz 10 Prescaler
1.5GHz ± 10 Prescaler
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:13A; On-Resistance, Rds(on):15mohm; Rds(on) Test
|
Mitel Semiconductor
MITEL[Mitel Networks Corporation]
|
